GaSb Based p-i-n Photodiode with Partially Depleted Absorber for High-Speed and High-Power Performance at 2.5 μm Wavelength

Author(s)

J.-M. Wun, Y.-W. Wang, Y.-H. Chen, J. E. Bowers, and J.-W. Shi

Publication Date

Fri, 07/01/2016 - 12:00

Publication Type

Journal

Journal/Conference Name

IEEE Transactions on Electron Devices

Indexing

Volume: 63, Issue: 7, Page(s): 2796 – 2801

Publication File

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