News Date
UCSB and HKUST demonstrated the integration of quantum dot lasers and photodetectors on silicon substrates. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band.
News External Link
News Image
![Semiconductor Today](/sites/default/files/styles/medium/public/2017-12/semiconductortoday_0.png?itok=4UZOe4l3)