1.55mm Absorption, High Speed, High Saturation Power, P-I-N Photodetector Using Low-Temperature Grown GaAs | Bowers

Author(s)

Y.-J. Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K.Mishra

Publication Date

Mon, 10/12/1998 - 12:00

Publication Type

Conference

Journal/Conference Name

Microwave Photonics Meeting

Indexing

Princeton, NJ

Publication File

chiu98mwp.pdf241.57 KB