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We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
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![Justin Norman](/sites/default/files/styles/medium/public/2017-11/20171120_100555_Richtone%28HDR%29%20%282%29.jpg?itok=KxQQ4_kS)
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Norman IPC_Abstract.pdf1.4 MB