Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

Author(s)
L. Megalini, B. C. Cabinian, H. Zhao, D. C. Oakley, J. E. Bowers, and J. Klamkin
Publication Image
reciprocal space map map of the PIN MQW structure around (004) Bragg reflections
Publication Date
Publication Type
Journal
Journal/Conference Name
Journal of Electronic Materials
Indexing
https://doi.org/10.1007/s11664-017-5887-9
Publication File
Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition.pdf1.87 MB
Related Profiles
John Bowers
More Research Areas
Epitaxial Growth on Si