The development of integrated semiconductor lasers has miniaturized traditional
bulky laser systems, enabling a wide range of photonic applications. A
progression from pure III-V based lasers to III-V/external cavity structures has
harnessed low-loss waveguides in different material systems, leading to significant
improvements in laser coherence and stability. Despite these successes,
however, key functions remain absent. In this work, we address a
critical missing function by integrating the Pockels effect into a semiconductor
laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate
several essential capabilities that have not existed in previous integrated
lasers. These include a record-high frequency modulation speed of 2
exahertz/s (2.0 × 10^18 Hz/s) and fast switching at 50 MHz, both of which are
made possible by integration of the electro-optic effect. Moreover, the device
co-lases at infrared and visible frequencies via the second-harmonic frequency
conversion process, the first such integrated multi-color laser. Combined with
its narrow linewidth and wide tunability, this new type of integrated laser holds
promise for many applications including LiDAR, microwave photonics, atomic
physics, and AR/VR.