Heterogeneous integration of a III–V quantum dot laser on high thermal conductivity silicon carbide

R. Koscica, Y. Wan, W. He, M. J. Kennedy, and J. E. Bowers
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As-fabricated device cross-section
Publication Date
Publication Type
Journal/Conference Name
Optics Letters
48, 10

Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III–V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III–V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates
with high temperature stability. A large T0 of 221K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.