Heterogeneous integration of a III–V quantum dot laser on high thermal conductivity silicon carbide

Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III–V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III–V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates
with high temperature stability. A large T0 of 221K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.