Noise Figure of Vertical-Cavity Semiconductor Optical Amplifiers |
E.S. Björlin, J.E. Bowers |
IEEE Journal of Quantum Electronics |
vol. 38, no. 1, pp. 61-66 |
January 1, 2002 |
bjorlin02jqe.pdf106.3 KB |
Analog Modulation of Semiconductor Lasers |
J. Piprek and J. E. Bowers |
RF Photonic Technology in Optical Fiber Links |
Chapter 3, W. Chang, Ed. Cambridge University Press |
January 1, 2002 |
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Vertical-Cavity Amplifying Modulator at 1.3 µm |
E.S. Björlin, A. Dahl, J. Piprek, P. Abraham, Y.-J. Chiu, J. E. Bowers |
IEEE Photonics Technology Letters |
Vol. 13, No. 12, pp. 1271-1273 |
December 1, 2001 |
bjorlin01ptl.pdf60.69 KB |
Passive Microring-Resonator-Coupled Lasers |
B. Liu, A. Shakouri, J. E. Bowers |
Applied Physics Letters |
vol. 79, no. 22, pp. 3561-3563 |
November 26, 2001 |
liu00apl.pdf103.82 KB |
Ultraviolet Picosecond Optical Pulse Generation from a Mode-Locked InGaN Laser Diode |
S. Gee, J. E. Bowers |
Applied Physics Letters |
vol. 79, no. 13, pp. 1951-1952 |
September 24, 2001 |
gee01apl.pdf49.32 KB |
Vertical and Lateral Heterogeneous Integration |
J. Geske, V. Jayaraman, Y. L. Okuno, J. E. Bowers |
Applied Physics Letters |
vol. 79, no. 12, pp. 1760-1762 |
September 17, 2001 |
geske01apl.pdf244.92 KB |
Distributed Effects Model for Cascaded Traveling-Wave Electroabsorption Modulator |
Y. -J. Chiu, V. Kaman, S.Z. Zhang, J.E. Bowers |
IEEE Photonics Technology Letters |
vol. 13, no. 8, pp. 791-793 |
August 1, 2001 |
chiu01ptl.pdf74 KB |
InP-InGaAsP Wafer-Bonded Vertically Coupled X-Crossing Multiple Channel Optical Add-Drop Multiplexer |
M. Raburn, B. Liu, Y. Okuno and J. E. Bowers |
IEEE Photonics Technology Letters |
vol. 13, no. 6, pp. 579-581 |
June 1, 2001 |
raburn01ptl.pdf70.27 KB |
Metal-Semiconductor-Metal Traveling-Wave Photodetectors |
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, C.-K. Sun, Y.-J. Yang, J. E. Bowers |
IEEE Photonics Technology Letters |
vol. 13, no. 6, pp. 623-625 |
June 1, 2001 |
shi01ptl.pdf58 KB |
Wafer Bonded 1.55 µm Vertical-Cavity Lasers with Continuous-Wave Operation Up to 105°C |
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek, and J. E. Bowers |
Applied Physics Letters |
78(18) p. 2632-2633 |
April 30, 2001 |
J313.pdf218.56 KB |