Silicon-Indium-Gallium-Arsenide Avalanche Photodetectors	A. R. Hawkins		December 1, 1998	1998 - Hawkins - Silicon-Indium-Gallium-Arsenide Avalanche Photodetectors.PDF3.26 MB
Wafer-Fused Optoelectronics for Switching	A. Shakouri, B. Liu, B.-G. Kim, P. Abraham, A. W. Jackson, A. C. Gossard, J. E. Bowers	IEEE Journal of Lightwave Technologyvol. 16, no. 12, pp. 2236	December 1, 1998	shakouri98jlt.pdf477 KB
Enhanced Thermionic Emission Cooling in High Barrier Superlattice Heterostructures	A. Shakouri, C. LaBounty, P. Abraham, J. Piprek, J. Bowers	Materials Research Society Proceedings Vol. 545, Thermionic T.M.Tritt, M.G. Kanatzidis, G.D.Mahan, H.B.Lyon, Eds., pp. 4	November 30, 1998	shakouri98mrs.pdf360 KB
Effects of Carrier Cooling and Carrier Heating in Saturation Dynamics and Pulse Propagation Through Bulk Semiconductor Absorbers	A. V. Uskov, J. R. Karin, J. E. Bowers, J. G. McInerney, J. Le Bihan	IEEE Journal of Quantum Electronicsvol. 34, no. 11, pp. 2162-2171	November 1, 1998	uskov98jqe.pdf298 KB
1.55mm Absorption, High Speed, High Saturation Power, P-I-N Photodetector Using Low-Temperature Grown GaAs	Y.-J. Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K.Mishra	Microwave Photonics MeetingPrinceton, NJ	October 12, 1998	chiu98mwp.pdf241.57 KB
LTG-GaAs Grown on Silicon Substrates for THz-Photomixer Applications	C. Kadow, A. Jackson, J. Ibbetson, A. Gossard, S. Fleischer, J.E. Bowers	Symposium on Nonstoichiometric III-V CompoundsErlangen, Germany	October 5, 1998
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures	S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, T. Sota	Applied Physics Lettersvol. 73, no. 14, pp. 2006-2008	October 5, 1998	chichibu98apl.pdf74.25 KB
Effects of quantum well recombination losses on the internal differential efficiency of multi-quantum-well lasers	J. Piprek, P. Abraham, J. E. Bowers	Conference Digest of the 16th IEEE International Semiconductpp. 167-168, Nara, Japan	October 4, 1998	piprek98islc.pdf27 KB
Improved Extinction Ratio in Ultra Short Directional Couplers Using Asymmetric Structures	B. Kim, A. Shakouri, B. Liu, J. E. Bowers	Japanese Journal of Applied Physicsvol. 37, no. 2, pp. L930-L932	August 1, 1998	kim98jjap.pdf158.1 KB
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes	S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars	Applied Physics Lettersvol. 73, no. 4, pp. 496-498	July 27, 1998	chichibu98apl2.pdf81 KB