Title	Author(s)	Journal	Indexing	Publication Date	Publication File
Improved Extinction Ratio in Ultra Short Directional Couplers Using Asymmetric Structures	B. Kim, A. Shakouri, B. Liu, J. E. Bowers	Japanese Journal of Applied Physics	vol. 37, no. 2, pp. L930-L932	August 1, 1998	kim98jjap.pdf158.1 KB
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes	S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars	Applied Physics Letters	vol. 73, no. 4, pp. 496-498	July 27, 1998	chichibu98apl2.pdf81 KB
High-Speed Low-Temperature-Grown GaAs p-i-n Traveling-Wave Photodetector	Y.-J. Chiu, S. B. Fleischer, J. E. Bowers	IEEE Photonics Technology Letters	vol. 10, no. 7, pp. 1012-1014	July 1, 1998	chiu98ptl.pdf50.4 KB
GaAs-based, 1.55 µm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector	Yi-Jen Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K. Mishra	Electronics Letters	vol.34, no.12, pp. 1253-1255	June 11, 1998	chiu98ell.pdf325 KB
Growth and Properties of InGaN Nanoscale Islands on GaN	S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U.K. Mishra, S.P. DenBaars, W. Seifert	Journal of Crystal Growth	vol. 189/190, pp. 29-32,	June 1, 1998	keller98jcg.pdf152 KB
Fused vertical couplers	B. Liu, A. Shakouri, P. Abraham, B.-G Kim, A. W. Jackson, J. E. Bowers	Applied Physics Letters	vol. 72, no. 21, pp. 2637-2638	May 25, 1998	liu98apl.pdf256 KB
Cleaved and Etched Facet Nitride Laser Diodes	A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy, S. Keller, J. S. Speck, J. E. Bowers, U. K. Mishra, L. A. Coldren, S. P. DenBaars	IEEE Journal on Selected Topics in Quantum Electronics	vol. 4, no. 3, pp. 505-509	May 1, 1998	abare98jstqe.pdf89 KB
The Microstrip Laser	D. Tauber, M. Horita, J. Piprek, P. Abraham, A. L. Holmes, Jr., J. E. Bowers	IEEE Photonics Technology Letters	vol. 10, no. 4 pp. 478-480	April 1, 1998	tauber98ptl.pdf52 KB
Intraband carrier kinetics and picosecond pulse shaping in field-enhanced semiconductor absorbers	A. V. Uskov, J. R. Karin, J. E. Bowers, J. McInerney	Optics Letters	vol. 23, no. 5, pp. 376-378	March 1, 1998	uskov98ol.pdf273 KB
Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence	M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, S. P. Denbaars	Applied Physics Letters	vol. 72, no. 9, pp. 1066-1068	March 1, 1998	minsky98apl.pdf68.3 KB